click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? improved ? direct ? replacement ? for ? siliconix ? & ? national ? 2N5912 ? low ? noise ? (10khz) ? e n ~ ? 4nv/ hz ? high ? transconductance ? (100mhz) ? g fs ? ? 4000s ? absolute ? maximum ? ratings ? 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +150c ? operating ? junction ? temperature ?\ 55c ? to ? +135c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ? (total) ? 500mw ? maximum ? currents ? gate ? current ? 50ma ? maximum ? voltages ? gate ? to ? drain ?\ 25v ? gate ? to ? source ?\ 25v ? ?? ?? ?? matching ? characteristics ? @ ? 25c ? (unless ? otherwise ? stated) ? symbol ? characteristic ? min ? typ ? max ? units ? conditions ? |v gs1 ? ? ? v gs2 ? | ? differential ? gate ? to ? source ? cutoff ? voltage ? \\? \\? 15 ? mv ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????????? ? ? |v gs1 ? ? ? v gs2 ? | ? / ?? t ? ? differential ? gate ? to ? source ? cutoff ?? voltage ? change ? with ? temperature ? \\? \\? 40 ? v/c ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????? t a ? = ?\ 55c ? to ? +125c ? i dss1 ?? / ? i dss2 ? ? gate ? to ? source ? saturation ? current ? ratio ? 0.95 ? \\? 1 ? % ? v ds ? = ? 10v, ? v gs ? = ? 0v ? |i g1 ? ? ? i g2 ? | ? differential ? gate ? current ? \\? \\? 20 ? na ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????? t a ? = ? +125c ?? g fs1 ? / ? g fs2 ? ? forward ? transconductance ? ratio 2 ? 0.95 ? \\? 1 ? % ? v ds ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 1khz ? cmrr ? common ? mode ? rejection ? ratio ? \\? 85 ? \\? db ? v dg ? = ? 5v ? to ? 10v, ? i d ? = ? 5ma ????????? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv gss ? gate ? to ? source ? breakdown ? voltage ?\ 25 ? \\? ? ? v ? ? i g ? = ?\ 1a, ? v ds ? = ? 0v ? v gs ( off ) ? gate ? to ? source ? cutoff ? voltage ?\ 1 ? \\? \ 5 ? v ds ? = ? 10v, ? i d = ? 1na ? v gs ( f ) ? gate ? to ? source ? forward ? voltage ? \\? 0.7 ? \\? i g ? = ?? 1ma, ? v ds ? = ? 0v ? v gs ? gate ? to ? source ? voltage ?\ 0.3 ? \\? \ 4 ? v dg ? = ? 10v, ? i g ? = ? 5ma ? i dss ? gate ? to ? source ? saturation ? current 3 ? 7 ? \\? 40 ? ma ? v ds ? = ? 10v, ? v gs ? = ? 0v ? i gss ? gate ? leakage ? current 3 ? \\? \ 1 ?\ 50 ?? pa ? v gs ? = ?\ 15v, ? v ds ? = ? 0v ? i g ? gate ? operating ? current ? \\? \ 1 ?\ 50 ? v dg ? = ? 10v, ? i d ? = ? 5ma ? g fs ? forward ? transconductance ? 4000 ? \\? 10000 ?? s ? ? ? v dg ? = ? 10v, ? i d = ? 5ma ? 4000 ? \\? 10000 ? g os ? output ? conductance ? \\? \\? 100 ? \\? \\? 150 ? c iss ? input ? capacitance ? \\? \\? 5 ? pf ? ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 1mhz ? c rss ? reverse ? transfer ? capacitance ? \\? \\? 1.2 ? nf ? noise ? figure ? \\? \\? 1 ? db ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 10khz, ? r g ? = ? 100k ? e n ? equivalent ? input ? noise ? voltage ? \\? 7 ? 20 ? nv/ hz ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 100hz ? \\? 4 ? 10 ? v dg ? = ? 10v, ? i d ? = ? 5ma, ? f ? = ? 10khz ? notes: ? 1. ? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? serviceability ? may ? be ? impaired ????? 2. ? pulse ? test: ? pw ?? 300s ? duty ? cycle ?? 3% 3. ? assumes ? smaller ? value ? in ? numerator ? ? ? 2N5912 monolithic dual n-channel jfet linear s y stems re p laces discontinued siliconix & national 2N5912 2N5912 applications: ? wideband differential amps ? high-speed,temp-compensated single- ended input amps ? high-speed comparators ? impedance converters and vibrations detectors . the 2N5912 are monolithic dual jfets. the monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. these devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. the 2N5912 is a direct replacement for discontinued siliconix and national 2N5912. the hermetically sealed to-71 is well suited for military and harsh environment applications. (see packaging information). please contact micross for fu ll package and die dimensions: email: chipcomponents@micross.com web: www.micross.com/distribution.aspx to-71 (top view) available packages: 2N5912 in to-71 2N5912 available as bare die
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